Chemical Vapor Deposition: Thermal and Plasma Deposition of Electronic MaterialsSpringer US, 31/03/1995 - 292 من الصفحات In early 1987 I was attempting to develop a CVD-based tungsten process for Intel. At every step ofthe development, information that we were collecting had to be analyzed in light of theories and hypotheses from books and papers in many unrelated subjects. Thesesources were so widely different that I came to realize there was no unifying treatment of CVD and its subprocesses. More interestingly, my colleagues in the industry were from many disciplines (a surface chemist, a mechanical engineer, a geologist, and an electrical engineer werein my group). To help us understand the field of CVD and its players, some of us organized the CVD user's group of Northern California in 1988. The idea for writing a book on the subject occurred to me during that time. I had already organized my thoughts for a course I taught at San Jose State University. Later Van Nostrand agreed to publish my book as a text intended for students at the senior/first year graduate level and for process engineers in the microelectronics industry, This book is not intended to be bibliographical, and it does not cover every new material being studied for chemical vapor deposition. On the other hand, it does present the principles of CVD at a fundamental level while uniting them with the needs of the microelectronics industry. |
المحتوى
Thin Film Phenomena | 8 |
Manufacturability | 41 |
Chemical Equilibrium and Kinetics | 62 |
حقوق النشر | |
9 من الأقسام الأخرى غير ظاهرة
طبعات أخرى - عرض جميع المقتطفات
عبارات ومصطلحات مألوفة
activation energy adsorption aluminum applications atoms BPSG chamber Chapter Chemical Vapor Deposition chemistry coefficient collision components concentration conductive conductors constant copper CVD films CVD processes CVD reactors density deposition rate device dielectric diffusion dopant doped electrical Electrochem electron epi layer epitaxial growth equation equilibrium etching film properties flow formation free energy frequency function GaAs gas phase gases gate gauge Gibbs free energy gradient growth rate H₂ heat Hence hydrogen increase Integrated Circuit interconnect ionization kinetics laser LPCVD measure mechanism metal microelectronics MOCVD molecular molecules nitride nucleation occurs oxide oxygen partial pressure PECVD phosphorus polysilicon potential precursors produced pumping speed rate-controlling ratio reactants reduced Reprinted resistivity semiconductor shown in Figure SiH4 silane silicide silicon SiO2 species sputtered step coverage stoichiometry stress structure substrate susceptor techniques thermal CVD thermodynamics thickness thin film torr tube tungsten hexafluoride vacuum vapor deposition velocity VLSI voltage wafer