Properties of Crystalline SiliconRobert Hull IET, 1999 - 1016 من الصفحات Silicon, as used in silicon chips, is the material on which the information society depends for its computer power. In this reference work aimed at academics, process developers and device simulation engineers working in silicon microelectronics, Professor Hull has brought together 100 authors from the USA, Japan and Europe to review its properties. |
المحتوى
5 | 24 |
1 | 53 |
2 | 69 |
3 | 75 |
5 | 108 |
6 | 122 |
8 | 128 |
2 | 153 |
BAND STRUCTURE Edited by R J Turton | 379 |
ELECTRICAL PROPERTIES Edited by S H Jones | 411 |
IMPURITIES IN SILICON Edited by S J Pearton | 477 |
DOPANTS IN SILICON Edited by K Jones | 597 |
DEFECT LEVELS IN SILICON Edited by H Grimmeis | 641 |
OPTICAL PROPERTIES Edited by D E Aspnes | 677 |
IMPLANTATIONIRRADIATION OF SILICON Edited by R Elliman | 731 |
GETTERING Edited by E R Weber | 775 |
4 | 159 |
6 | 168 |
STRUCTURAL MODELLING Edited by M Heggie | 243 |
ETCHING Edited by K R Williams | 809 |
طبعات أخرى - عرض جميع المقتطفات
عبارات ومصطلحات مألوفة
absorption acceptor annealing Appl atoms band bandgap boron bulk c-Si calculations carrier centres chalcogen charge chemical cm¹ cm² cm³ concentration crystal dangling bonds Datareview density dependence device diffusion coefficient dimer dislocations donor dopant doping dose effect electrical Electrochem electron energy epitaxial etch rate experimental FIGURE film formation Forum Switzerland function G.D. Watkins gettering growth hydrogen IEEE impurities increase interaction interface interstitial intrinsic ion implantation lattice layer Lett material measurements melt metal method mobility n-type Netherlands observed obtained oxide oxygen parameters phonon phosphorus Phys plasma point defects precipitates Proc profiles pseudopotential range recombination reconstruction room temperature samples segregation segregation coefficient Semiconductor silicide silicon SIMOX SiO2 Solid Solidi A Germany solubility Status Solidi stress structure studies substrate supercell surface Switzerland Symp TABLE techniques Technol Technology thermal transition vacancy valence band values wafer