Chemical Vapor Deposition: Thermal and Plasma Deposition of Electronic MaterialsSpringer Science & Business Media, 11/11/2013 - 292 من الصفحات In early 1987 I was attempting to develop a CVD-based tungsten process for Intel. At every step ofthe development, information that we were collecting had to be analyzed in light of theories and hypotheses from books and papers in many unrelated subjects. Thesesources were so widely different that I came to realize there was no unifying treatment of CVD and its subprocesses. More interestingly, my colleagues in the industry were from many disciplines (a surface chemist, a mechanical engineer, a geologist, and an electrical engineer werein my group). To help us understand the field of CVD and its players, some of us organized the CVD user's group of Northern California in 1988. The idea for writing a book on the subject occurred to me during that time. I had already organized my thoughts for a course I taught at San Jose State University. Later Van Nostrand agreed to publish my book as a text intended for students at the senior/first year graduate level and for process engineers in the microelectronics industry, This book is not intended to be bibliographical, and it does not cover every new material being studied for chemical vapor deposition. On the other hand, it does present the principles of CVD at a fundamental level while uniting them with the needs of the microelectronics industry. |
المحتوى
8 | |
Manufacturability | 41 |
Chemical Equilibrium and Kinetics | 62 |
Contents | 63 |
Reactor Design for Thermal CVD 76 | 94 |
Fundamentals of Plasma Chemistry | 119 |
Processing Plasmas and Reactors | 144 |
CVD of Conductors | 163 |
vii | 170 |
CVD of Dielectrics | 204 |
CVD of Semiconductors | 227 |
Emerging CVD Techniques | 266 |
AppendixVacuum Techniques for CVD | 273 |
287 | |
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عبارات ومصطلحات مألوفة
activation energy adsorption aluminum applications atoms cathode chamber Chapter chemical reaction Chemical Vapor Deposition chemistry coefficient collision components concentration conductors CVD processes CVD reactors density device dielectric diffusion dopant doped electrical Electrochem electron energy change epitaxial equation equilibrium constant etching film growth film properties flow formation free energy frequency function gas phase gases Gibbs free energy glow discharge gradient grain growth rate H₂ heat Hence hydrogen increase interconnect ionization John Wiley kinetics LPCVD mechanism metal microelectronics molecular molecules nitride nucleation occurs oxide oxygen partial pressure PECVD plasma potential polysilicon precursors produce rate-controlling ratio reactants reaction coordinate reaction rate reduced Reprinted resistivity semiconductor sheath shown in Figure SiH4 silane silicide silicon SiO2 solid species step coverage stoichiometry stress substrate susceptor temperature thermal CVD thermodynamics thickness thin film torr tube tungsten tungsten hexafluoride vapor velocity VLSI voltage wafer wall reactors